Si field emitter array with 90-nm-diameter gate holes

We have successfully developed an extremely scaled-down Si field emitter array with 90-nm-diameter gates. The developed field emitter array has a unique two-step thick insulator underneath the gate electrode, which enables the insulator to be kept thick and which enables the long creeping distance between the emitter and the gate electrodes to be maintained even if the gate diameter is reduced. A fabricated field emitter array has an extremely small gate diameter of 90 nm and shows a low threshold voltage of 22 V at 1 nA/tip.