Full-band Monte Carlo simulation of a 0.12 /spl mu/m-Si-PMOSFET with and without a strained SiGe-channel

Author

Jungemann, C. ; Keith, S. ; Meinerzhagen, B.

Author_Institution

Inst. fur Theor. Elektrotech. und Mikroelektron., Bremen Univ., Germany

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

897

Lastpage

900

Abstract

Si-PMOSFETs with and without a strained Si/sub 0.7/Ge/sub 0.3/-layer in the channel region are investigated by full-band Monte Carlo simulation for the first time. The low-field effective channel mobility is considerably enhanced due to the strained SiGe-layer. However, the resultant performance improvement in the case of a 0.12 /spl mu/m-PMOSFET with a drain and gate bias of 1.5 V is less than 10%. This is due to the saturation velocity, which in contrast to the low-field mobility is not enhanced but reduced compared to relaxed Si.

Keywords

Ge-Si alloys; MOSFET; Monte Carlo methods; carrier mobility; digital simulation; elemental semiconductors; semiconductor device models; semiconductor materials; silicon; 0.12 micron; 1.5 V; PMOSFET; Si-SiGe; drain bias; full-band Monte Carlo simulation; gate bias; low-field effective channel mobility; saturation velocity; strained channel; CMOS process; Charge carrier processes; Electron mobility; Fabrication; Germanium silicon alloys; Light scattering; MOSFET circuits; Monte Carlo methods; Particle scattering; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746499

Filename

746499