Performance characteristics of GaAs-based oxide-confined In(Ga)As/GaAs quantum-dot vertical-cavity surface-emitting diode lasers

Author

Piskorski, Lukasz ; Wasiak, Micha ; Sarza, Robart P. ; Nakwaski, W. Odzimierz

Author_Institution

Lab. of Comput. Phys., Tech. Univ. of Lodz, Lodz

Volume

2

fYear

2008

fDate

22-26 June 2008

Firstpage

153

Lastpage

156

Abstract

The self-consistent model has been used to simulate an operation of the 1.3 -mum GaAs-based quantum-dot (QD) In(Ga)As/GaAs laser. An impact of the QD density and uniformity on laser operation characteristics has been discussed. Performance of oxide-confined (OC) and proton-implanted (PI) VCSELs has been compared and their optimal structures have been analysed. Lasing thresholds of PI VCSELs have been found to be lower at room temperature than those of OC VCSELs but, at higher temperatures, this relation becomes inverted.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; semiconductor quantum dots; surface emitting lasers; InGaAs-GaAs; lasing thresholds; quantum-dot vertical-cavity surface-emitting diode lasers; self-consistent model; wavelength 1.3 micron; Apertures; Diode lasers; Distributed Bragg reflectors; Gallium arsenide; Laser modes; Mirrors; Optical resonators; Quantum dots; Surface emitting lasers; Vertical cavity surface emitting lasers; 1300-nm VCSELs; optimisation of VCSEL designs; quantum-dot lasers; simulation of a diode laser operation;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks, 2008. ICTON 2008. 10th Anniversary International Conference on

Conference_Location

Athens

Print_ISBN

978-1-4244-2625-6

Electronic_ISBN

978-1-4244-2626-3

Type

conf

DOI

10.1109/ICTON.2008.4598618

Filename

4598618