Title :
Performance characteristics of GaAs-based oxide-confined In(Ga)As/GaAs quantum-dot vertical-cavity surface-emitting diode lasers
Author :
Piskorski, Lukasz ; Wasiak, Micha ; Sarza, Robart P. ; Nakwaski, W. Odzimierz
Author_Institution :
Lab. of Comput. Phys., Tech. Univ. of Lodz, Lodz
Abstract :
The self-consistent model has been used to simulate an operation of the 1.3 -mum GaAs-based quantum-dot (QD) In(Ga)As/GaAs laser. An impact of the QD density and uniformity on laser operation characteristics has been discussed. Performance of oxide-confined (OC) and proton-implanted (PI) VCSELs has been compared and their optimal structures have been analysed. Lasing thresholds of PI VCSELs have been found to be lower at room temperature than those of OC VCSELs but, at higher temperatures, this relation becomes inverted.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; semiconductor quantum dots; surface emitting lasers; InGaAs-GaAs; lasing thresholds; quantum-dot vertical-cavity surface-emitting diode lasers; self-consistent model; wavelength 1.3 micron; Apertures; Diode lasers; Distributed Bragg reflectors; Gallium arsenide; Laser modes; Mirrors; Optical resonators; Quantum dots; Surface emitting lasers; Vertical cavity surface emitting lasers; 1300-nm VCSELs; optimisation of VCSEL designs; quantum-dot lasers; simulation of a diode laser operation;
Conference_Titel :
Transparent Optical Networks, 2008. ICTON 2008. 10th Anniversary International Conference on
Conference_Location :
Athens
Print_ISBN :
978-1-4244-2625-6
Electronic_ISBN :
978-1-4244-2626-3
DOI :
10.1109/ICTON.2008.4598618
