Title :
Numerical investigation of a SiGe HBT electro-optic modulator
Author :
Deng, Shengling ; Huang, Z. Rena ; Guo, J.-R. ; McDonald, J.F. ; Kraft, Russ P.
Author_Institution :
Dept. of Electr., Rensselaer Polytech. Inst., Troy, NY
Abstract :
We analyzed an electro-optic modulator consisting of a heterojunction bipolar transistor (HBT) with graded SiGe composition in the base. Simulation shows single mode operation is attainable with an interaction length Ltautau of 40.8 mum.
Keywords :
Ge-Si alloys; electro-optical modulation; heterojunction bipolar transistors; HBT electro-optic modulator; SiGe; carrier injection; graded silicon germanium composition; heterojunction bipolar transistor; interaction length; single-mode transistor operation; Electrooptic modulators; Electrooptical waveguides; Germanium silicon alloys; Heterojunction bipolar transistors; Optical modulation; Optical ring resonators; Optical waveguides; Plasma devices; Refractive index; Silicon germanium;
Conference_Titel :
IEEE/LEOS Winter Topicals Meeting Series, 2009
Conference_Location :
Innsbruck
Print_ISBN :
978-1-4244-2610-2
Electronic_ISBN :
978-1-4244-2611-9
DOI :
10.1109/LEOSWT.2009.4771632
