DocumentCode
25778
Title
Breakthroughs in Photonics 2013: A Microwatt-Threshold Raman Silicon Laser
Author
Takahashi, Y. ; Noda, Satoshi
Author_Institution
Nanosci. & Nanotechnol. Res. Center, Osaka Prefecture Univ., Sakai, Japan
Volume
6
Issue
2
fYear
2014
fDate
Apr-14
Firstpage
1
Lastpage
5
Abstract
A continuous-wave Raman silicon laser using a photonic-crystal high- Q nanocavity was developed in 2013, with a cavity size of less than 10 μm and an unprecedented ultralow threshold of 1 μW. This report describes how this breakthrough was accomplished by adopting a unique nanocavity design.
Keywords
Raman lasers; laser cavity resonators; nanophotonics; photonic crystals; semiconductor lasers; silicon; Si; cavity size; continuous-wave Raman silicon laser; microwatt-threshold Raman silicon laser; nanocavity design; photonic-crystal high-Q nanocavity; Laser excitation; Optical waveguides; Photonic crystals; Photonics; Pump lasers; Silicon; Waveguide lasers; Nanocavities; photonic crystal lasers; silicon nanophotonics;
fLanguage
English
Journal_Title
Photonics Journal, IEEE
Publisher
ieee
ISSN
1943-0655
Type
jour
DOI
10.1109/JPHOT.2014.2310218
Filename
6762863
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