• DocumentCode
    2578221
  • Title

    Effects of high pressure hydrogen anneal process on performance and reliability in HfO2/SiO2 dielectric with contact etch stop layer stressor

  • Author

    Song, Seung Hyun ; Park, Min Sang ; Lee, Kyong Taek ; Choi, Hyun Sik ; Choi, Gil Bok ; Baek, Rock Hyun ; Sagong, Hyun Chul ; Jung, Sung Woo ; Kang, Chang Yong ; Wu, Bob ; Jeong, Yoon-Ha

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
  • fYear
    2009
  • fDate
    2-5 June 2009
  • Firstpage
    225
  • Lastpage
    228
  • Abstract
    Effects of high pressure hydrogen annealing (HPHA) process on a nitride contact etch stop layer (CESL) MOSFETs is studied. High interface quality by HPHA leads to improved on-current (Ion) and transconductance (Gm) while reliability degradation is acceptable.
  • Keywords
    MOSFET; annealing; hafnium compounds; silicon compounds; HfO2-SiO2; contact etch stop layer stressor; high pressure hydrogen annealing; reliability degradation; transconductance; Annealing; Etching; Hafnium oxide; High-K gate dielectrics; Hydrogen; MOS devices; MOSFETs; Solids; Tin; USA Councils; Hydrogen; MOS devices; strain engineering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE
  • Conference_Location
    Traverse City, MI
  • Print_ISBN
    978-1-4244-4695-7
  • Electronic_ISBN
    978-1-4244-4696-4
  • Type

    conf

  • DOI
    10.1109/NMDC.2009.5167526
  • Filename
    5167526
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2578221