DocumentCode :
2578260
Title :
Advances in selective etching for nano scale salicide fabrication
Author :
Chu, Ming Mao ; Chou, Jung-Hua
Author_Institution :
Eng. Sci. Dept., Nat. Cheng Kung Univ., Tainan, Taiwan
fYear :
2009
fDate :
2-5 June 2009
Firstpage :
162
Lastpage :
165
Abstract :
High temperature SPM based wet selective processing for multi-step NiPt silicide process on nanoscale CMOS structure with dual gate dense layout has been studied. The high temperature SPM process is found to have better etching selectivity between NiPt/TiN and nickel rich silicide (Ni2Si/Ni3Si2) and results in better sheet resistance (Rs) and uniformity compare to HCL based process. The high temperature SPM process window is effective for Pt and induces very low material loss. Thus, it is a better selective etching process for multi-step silicide process that can scale with the CMOS technology toward 22 nm node.
Keywords :
CMOS integrated circuits; etching; nanotechnology; nickel alloys; nickel compounds; platinum alloys; titanium compounds; CMOS technology; Ni2Si-Ni3Si2; NiPt-TiN; dual gate dense layout; high temperature SPM based wet selective processing; multistep NiPt silicide process; nanoscale CMOS structure; nanoscale salicide fabrication; nickel rich silicide; selective etching; sheet resistance; CMOS process; CMOS technology; Etching; Fabrication; Nanostructures; Nickel; Scanning probe microscopy; Silicides; Temperature; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE
Conference_Location :
Traverse City, MI
Print_ISBN :
978-1-4244-4695-7
Electronic_ISBN :
978-1-4244-4696-4
Type :
conf
DOI :
10.1109/NMDC.2009.5167528
Filename :
5167528
Link To Document :
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