Radiation hardened 64 K/256 K EEPROM technology

Author

Williams, D. ; Adams, D. ; Bishop, R. ; Knoll, M. ; Murray, Jacob ; McClintock, R.

Author_Institution

Northrop Grumman Corp., Baltimore, MD, USA

fYear

1996

fDate

24-26 Jun 1996

Firstpage

67

Lastpage

70

Abstract

This paper summarizes the status of 64 K and 256 K radiation hardened EEPROM devices that are being produced for space and strategic applications at Northrop Grumman Corporation. These devices use Silicon-Oxide-Nitride-Oxide-Semiconductor (SONOS) technology which provides improved total dose radiation hardness over floating gate devices. Circuit design techniques provide good resistance to single event and transient radiation effects. Several CMOS/SONOS devices are being produced including an 8 K×8 EEPROM, a 32 K×8 EEPROM (in development), plus mixed mode ASICs. This technology has been demonstrated to have better than 10 year retention at 80°C after 10 ⁴ programming cycles. The EEPROMs utilize a radiation hardened CMOS process technology currently specified at 300 Krad(Si) total dose hardness. Both n-channel and p-channel SONOS memory transistors are currently in use, but the EEPROMs are based on n-channel SONOS

Keywords

CMOS memory circuits; EPROM; integrated circuit testing; radiation effects; radiation hardening (electronics); 10 year; 256 Kbit; 64 Kbit; 80 C; CMOS/SONOS devices; EEPROM technology; SONOS technology; SiO₂-Si₃N₄-SiO₂; circuit design techniques; mixed mode ASICs; n-channel SONOS memory transistors; radiation hardened CMOS process technology; radiation hardened EEPROM devices; single event radiation effects; space applications; strategic applications; total dose radiation hardness; transient radiation effects; Clocks; EPROM; Electron traps; Fuses; Nonvolatile memory; Radiation hardening; Redundancy; SONOS devices; Voltage; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Nonvolatile Memory Technology Conference, 1996., Sixth Biennial IEEE International

Conference_Location

Albuquerque, NM

Print_ISBN

0-7803-3510-4

Type

conf

DOI

10.1109/NVMT.1996.534671

Filename

534671