Title :
Improvement of pattern shrinkage and roughness of photocurable polymer during dry etch process in photo-nanoimprint lithography
Author :
Sang Hoon Kim ; Hiroshima, H. ; Inoue, S. ; Komuro, M.
Author_Institution :
Adv. Semicond. Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
Abstract :
In this paper, photo-nanoimprint lithography is being focussed owing to working conditions at room temperature and low pressure. In this imprint lithography photocurable polymer is used as a top resist material. After imprinting process, it is observed that photocurable polymer remained between patterns on the substrate. This remained polymer should be removed, so that dry etch process was introduced. The increase in surface roughness and line edge roughness were found.
Keywords :
nanolithography; optical polymers; photoresists; proximity effect (lithography); sputter etching; surface roughness; ultraviolet radiation effects; 293 to 298 K; Si; dry etch process; line edge roughness; pattern shrinkage; photocurable polymer; photonanoimprint lithography; resist material; room temperature; surface roughness; Dry etching; Lithography; Materials science and technology; Pixel; Plastics industry; Polymers; Resists; Rough surfaces; Surface roughness; Temperature;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268615
