DocumentCode
2579247
Title
Characteristics and modeling of a non-planar and non-rectangular MOSFET for charge sensing in the Si micro-fluidic channel
Author
Hong-Kun Lyu ; Dong-Sun Kim ; Hey-Jung Park ; Hwan-Mok Jung ; Jang-Kyoo Shin ; Pyung Choi ; Jong-Hyun Lee ; Minho Lee ; Geunbae Lim
Author_Institution
Sch. of Electron. & Electr. Eng., Kyungpook Nat. Univ., Daegu, South Korea
fYear
2003
fDate
29-31 Oct. 2003
Firstpage
186
Lastpage
187
Abstract
In this paper, a non-planar and non-rectangular MOSFET having asymmetrical channel structure has been modeled based on Schwartz-Christoffel transformation and electrical characteristics of the fabricated 3D MOSFET were measured.
Keywords
MOSFET; elemental semiconductors; microfluidics; semiconductor device models; silicon; Schwartz-Christoffel transformation; Si; Si microfluidic channel; channel structure; charge sensing; electrical properties; nonplanar MOSFET; nonrectangular MOSFET; Anisotropic magnetoresistance; Biosensors; Current measurement; Electric variables; Electric variables measurement; Etching; MOSFET circuits; SPICE; Sensor phenomena and characterization; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-040-2
Type
conf
DOI
10.1109/IMNC.2003.1268637
Filename
1268637
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