Czochralski growth and characterization of mixed BGO-BSO crystals

Author

Galenin, E. ; Gerasymov, Ia ; Biatov, M. ; Sidletskiy, O. ; Baranov, V. ; Budagov, J. ; Davydov, Yu. ; Glagolev, V.

Author_Institution

Inst. for Scintillation Mater., NAS of Ukraine, Kharkiv, Ukraine

fYear

2014

fDate

26-30 May 2014

Firstpage

245

Lastpage

246

Abstract

Mixed BGO-BSO (BGSO) scintillation crystals with structure of eulitine are promising for application in high energy physics (HEP) experiments due to low cost, high density, and reasonable light output. This work is focused on optimization of growth parameters and composition of BGSO mixed crystals. BGSO with improved energy resolution up to 16.2% at 662 keV gamma-irradiation was obtained. The effects of recrystallization and post-growth thermal treatment are discussed.

Keywords

bismuth compounds; crystal growth from melt; crystal structure; gamma-ray effects; recrystallisation; scintillation; BGO-BSO scintillation crystal structure; Bi₄Si₃O₁₂-Bi₄Ge₃O₁₂; Czochralski growth; HEP experiments; electron volt energy 662 keV; energy resolution; gamma-irradiation; high energy physics experiments; mixed BGO-BSO crystal characterization; reasonable light output; recrystallization; thermal treatment; Crystals; Detectors; Heating; Platinum; Radiation effects; BGSO; Czochralski; crystal growth; scintillator;

fLanguage

English

Publisher

ieee

Conference_Titel

Oxide Materials for Electronic Engineering (OMEE), 2014 IEEE International Conference on

Conference_Location

Lviv

Print_ISBN

978-1-4799-5960-0

Type

conf

DOI

10.1109/OMEE.2014.6912434

Filename

6912434