The multilayer silicon nitride films as a media for charge storage in MNOS structures

Author

Evtukh, AA ; Litovchenko, V.G. ; Popov, V.G.

Author_Institution

Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine

fYear

1996

fDate

24-26 Jun 1996

Firstpage

91

Lastpage

93

Abstract

Charge storage in multilayer silicon nitride films of MNOS structures is investigated and compared with homogeneous films. Multilayer silicon nitride films were synthesized using nonmonotonical step changing of the NH₃ to SiCl₄ ratio during deposition. The energy bandgap of Si₃N₄ and energy barrier heights for electrons and holes change appreciably, depending on the reactive component ratio. In forming the multilayer silicon nitride films we created a graded bandgap insulator with energy wells and barriers. This allows the current transport and distribution of stored charge in the insulator of MNOS structures

Keywords

CVD coatings; MIS devices; MIS structures; chemical vapour deposition; electric charge; energy gap; insulating thin films; semiconductor storage; silicon compounds; MNOS structures; NH₃; Si₃N₄; SiCl₄; charge storage; deposition; energy barrier; energy wells; graded bandgap insulator; multilayer films; nonmonotonical step changing; reactive component ratio; Artificial intelligence; Charge carrier processes; Charge carriers; Electrodes; Energy barrier; Nonhomogeneous media; Nonvolatile memory; Semiconductor films; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nonvolatile Memory Technology Conference, 1996., Sixth Biennial IEEE International

Conference_Location

Albuquerque, NM

Print_ISBN

0-7803-3510-4

Type

conf

DOI

10.1109/NVMT.1996.534677

Filename

534677