Title :
Ge dot array formation using small convex position anchors
Author :
Kitayama, Daisuke ; Yoshizawa, T. ; Suda, Y.
Author_Institution :
Fac. of Technol., Tokyo Univ. of Agric. & Technol., Japan
Abstract :
In this paper, we apply new formation mechanisms to the method of artificially positioned Ge dot array formation on Si. In this method, Ge migrates and coalesces at small convex structures which are formed by Si patterning and function as a marker and an anchor for Ge dot positioning.
Keywords :
annealing; diffusion; elemental semiconductors; etching; germanium; semiconductor quantum dots; Ge; Ge dot array; Ge dot positioning; Ge migration; Si; Si patterning; annealing; convex position anchors; convex structures; etching; Annealing; Bonding; Crystalline materials; Earth; Etching; Photonic crystals; Silicon germanium; Temperature; Testing; US Department of Transportation;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268731
