Etching characteristics of Ta using BCl/sub 3//Cl/sub 2//Ar inductively coupled plasma

Author

Lee, Y.S. ; Na, S.W. ; Song, S.G. ; Kim, Y.M. ; Lee, N.-E. ; Ahn, J.H.

Author_Institution

Dept. of Mater. Eng., Sung Kyun Kwan Univ., Kyunggi, South Korea

fYear

2003

fDate

29-31 Oct. 2003

Firstpage

258

Lastpage

259

Abstract

Etching characteristics of 500nm thick Ta was investigated using inductively coupled BCl/sub 3//Cl/sub 2//Ar plasma. A positive photoresist (PR) with a thickness of 1.2/spl mu/m on Ta films were patterned using conventional photolithography. Etch rate and profiles were measured by a field-emission scanning electron microscopy (FE-SEM). XPS was used to investigate the chemical state of the etched surface for various gas mixing ratios.

Keywords

ESCA; X-ray photoelectron spectra; electron field emission; masks; metallic thin films; photoresists; scanning electron microscopy; sputter etching; tantalum; 1.2 micron; 500 nm; BCl/sub 3/-Cl/sub 2/-Ar; SEM; Ta; XPS; chemical state; etch rate; field-emission; inductively coupled BCl/sub 3//Cl/sub 2//Ar plasma; mask; photolithography; photoresist; plasma etching; scanning electron microscopy; Argon; Chemicals; Etching; Lithography; Plasma applications; Plasma chemistry; Plasma measurements; Plasma properties; Resists; Scanning electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-040-2

Type

conf

DOI

10.1109/IMNC.2003.1268744

Filename

1268744