Title :
A comprehensive PHEMT core model for switch applications
Author :
Wei, Ce-Jun ; Zhu, Yu ; Yin, Hong ; Klimashov, Olesky ; Bartle, Dylan
Author_Institution :
Skyworks Solutions Inc., Woburn, MA, USA
Abstract :
A comprehensive non-linear PHEMT core model for switch applications is described. The model combines an accurate description of CV below pinch-off and a 2D CV function above pinch-off for better charge and capacitance modeling. At the same time, more accurate is the model´s IV prediction on the current in the near pinch-off region. The model has detailed leakage equations and dispersion function covering a wide range of operation, and taking gate lag into consideration. The model was verified by a variety of measured data, including IV/transfer curves, leakages, floating voltages and S-parameters/CV curves. In a switch application, comparison between modeled and measured data on harmonics, insertion loss and isolation regarding various driving power shows excellent and consistent agreement in both on-state and off-state.
Keywords :
capacitance; electric charge; field effect transistor switches; high electron mobility transistors; semiconductor device models; 2D CV function; capacitance modeling; charge modeling; comprehensive PHEMT core model; comprehensive nonlinear PHEMT core model; dispersion function; leakage equations; switch application; Capacitance; Harmonic analysis; Integrated circuit modeling; Logic gates; Mathematical model; PHEMTs; Switches;
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5972576