RF characterization of epitaxial graphene nano ribbon field effect transistor

Author

Meng, N. ; Fernandez, J. Ferrer ; Pichonat, E. ; Lancry, O. ; Vignaud, D. ; Dambrine, G. ; Happy, H.

Author_Institution

Inst. of Electron., Microelectron. & Nanotechnol., CNRS, Villeneuve-d´´Ascq, France

fYear

2011

fDate

5-10 June 2011

Firstpage

1

Lastpage

3

Abstract

RF characterization of epitaxial graphene nano ribbon field-effect transistor (GNRFET) was investigated. The few layers graphene were synthesized by thermal decomposition of {0001} silicon carbide under UHV environment. Raman spectroscopy, AFM and Hall measurement were used to investigate the properties of graphene synthesized. Despite the Hall mobility was lower than 500 cm²/Vs, the intrinsic current gain cut-off frequency of 60 GHz and maximum oscillation frequency of 30 GHz were obtained. This work shows the strong potentiality of GNRFET in future high speed electronics.

Keywords

atomic force microscopy; field effect transistors; graphene; nanoelectronics; pyrolysis; AFM; GNRFET; Hall measurement; RF characterization; Raman spectroscopy; UHV environment; epitaxial graphene nanoribbon field effect transistor; frequency 30 GHz; frequency 60 GHz; silicon carbide; thermal decomposition; Epitaxial growth; FETs; Logic gates; Performance evaluation; Radio frequency; Silicon carbide; RF; SiC; characterization; graphene; ribbon; transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International

Conference_Location

Baltimore, MD

ISSN

0149-645X

Print_ISBN

978-1-61284-754-2

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2011.5972627

Filename

5972627