DocumentCode :
2582625
Title :
VHDL-AMS model of IGBT for electro-thermal simulation
Author :
Ibrahim, Their ; Allard, Bruno ; Morel, Hervé ; Mrad, Sabrine
Author_Institution :
AMPERE, Villeurbanne
fYear :
2007
fDate :
2-5 Sept. 2007
Firstpage :
1
Lastpage :
10
Abstract :
Many IGBT models have been published but none using VHDL-AMS language. The paper objective is to detail the electro-thermal simulation of IGBT and the coupling between electrical and thermal models using VHDL-AMS as a simulation language. This technique uses an electric circuit simulator and is based on a power IGBT model with temperature-dependent characteristics. Particular attention will be given to the extraction of model parameters. A novel electro-thermal coupling simulation is proposed. The simulation results using electrical and electro-thermal model show good agreements with measurement results. The compact thermal model is validated by a comparison to measured temperature transient responses.
Keywords :
hardware description languages; insulated gate bipolar transistors; IGBT; VHDL AMS model; electric circuit simulator; electro thermal coupling simulation; temperature dependent characteristics; temperature transient responses; Bonding; Circuit simulation; Circuit testing; Computational modeling; Coupling circuits; Equations; Insulated gate bipolar transistors; MOSFETs; Power system modeling; Temperature measurement; IGBT; Measurement; Modeling; Simulation; Thermal design;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications, 2007 European Conference on
Conference_Location :
Aalborg
Print_ISBN :
978-92-75815-10-8
Electronic_ISBN :
978-92-75815-10-8
Type :
conf
DOI :
10.1109/EPE.2007.4417461
Filename :
4417461
Link To Document :
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