DocumentCode
2584029
Title
Recent developments in IGCT gate units
Author
Backlund, Björn ; Luscher, M.
Author_Institution
ABB Switzerland Ltd., Lenzburg
fYear
2007
fDate
2-5 Sept. 2007
Firstpage
1
Lastpage
7
Abstract
Recent improvements in GCT silicon design have allowed increased turn-off capabilities for IGCTs thus placing greater demands on the gate-unit. This paper shows how the design challenges arising from this new turn-off capability have been addressed to re-establish "a balance" between the semiconductor and the gate unit for optimal IGCT performance.
Keywords
thyristors; GCT silicon design; IGCT gate unit; integrated gate commutated thyristor; power semiconductor device; turn-off capability; Capacitors; Ceramics; Choppers; Impedance; Inductance; Paramagnetic resonance; Silicon; Switching circuits; Temperature; Voltage; IGCT; Power semiconductor device; Reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications, 2007 European Conference on
Conference_Location
Aalborg
Print_ISBN
978-92-75815-10-8
Electronic_ISBN
978-92-75815-10-8
Type
conf
DOI
10.1109/EPE.2007.4417564
Filename
4417564
Link To Document