DocumentCode :
2584156
Title :
A 4″ wafer photostepper-based carbon nanotube FET technology for RF applications
Author :
Schroter, M. ; Kolev, P. ; Wang, D. ; Eron, M. ; Lin, S. ; Samarakone, N. ; Bronikowski, M. ; Yu, Z. ; Sampat, P. ; Syams, P. ; McKernan, S.
Author_Institution :
RFNano Corp., Newport Beach, CA, USA
fYear :
2011
fDate :
5-10 June 2011
Firstpage :
1
Lastpage :
4
Abstract :
Depletion-mode CNTFETs have been fabricated on 4" wafers with a photostepper-based process. The transistors show significant current and power gain with peak (fT, fmax) values of (9, 10) GHz. Compact model results are compared to experimental characteristics over bias and frequency. First RF amplifier circuit results are also shown.
Keywords :
carbon nanotubes; field effect transistors; nanotube devices; radiofrequency amplifiers; C; RF amplifier circuit; RF applications; depletion-mode CNTFET; photostepper-based process; power gain; size 4 in; transistors; wafer photostepper-based carbon nanotube FET technology; CNTFETs; Electron tubes; Gain; Integrated circuit modeling; Logic gates; Radio frequency; CNTFET modeling; CNTFET technology; Carbon nanotube FETs; RF applications;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
ISSN :
0149-645X
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2011.5972750
Filename :
5972750
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2584156
بازگشت