Title :
A Miniaturized Wafer-Scale Package Demonstrated with Three Enhancement Mode Amplifiers
Author :
Phan, Khanhtran ; Kessler, Julie ; Morkner, Henrik ; Vice, Mike ; Nguyen, Lan ; Roland, Jim
Author_Institution :
Wireless Semicond. Div., Avago Technol., San Jose, CA
Abstract :
This paper presents a 1 mm times 0.5 mm times 0.25 mm miniaturized package fabricated using internal E-PHEMT 6" wafers and industry-first Wafer-Scale Packaging technology. To demonstrate this technology, a set of three distinct amplifiers were developed. The 1-12 GHz 50-Ohm gain block operates with a 5 V, 55 mA supply and achieves 14 dB gain, 3.7 dB NF, 28 dBm OIP3 and 17 dBm OP1dB. The 0.5-6 GHz Bypass LNA requires a 5 V, 24 mA supply and has 14.5 dB gain, 2 dB NF in the gain state. The low-voltage LNA operates with a 1.8 V, 20 mA and produces 14.3 dB gain, 2.2 dB NF and -3 dBm IP-1 dB. These three SMT compatible products are unique and industry-leading in all aspects of performance, packaging and cost.
Keywords :
high electron mobility transistors; low noise amplifiers; millimetre wave amplifiers; wafer level packaging; bypass LNA; current 20 mA; current 24 mA; current 55 mA; enhancement mode amplifiers; frequency 1 GHz to 12 GHz; internal E-PHEMT wafers; miniaturized package; resistance 50 ohm; voltage 1.8 V; voltage 5 V; wafer-scale package; Costs; Gallium arsenide; Integrated circuit packaging; Integrated circuit technology; Microwave technology; Noise measurement; Optical amplifiers; Semiconductor device packaging; Surface-mount technology; Wireless LAN;
Conference_Titel :
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-007-1
DOI :
10.1109/EMICC.2008.4772225