The Effect of 3-MeV Proton Irradiation on the Performance of InGaN/GaN MQWs Solar Cells

Author

Zhen Bi ; Jincheng Zhang ; Ling Lv ; Yue Hao

Author_Institution

Sch. of Phys. & Optoelectron. Eng., Xidian Univ., Xi´an, China

Volume

26

Issue

15

fYear

2014

fDate

Aug.1, 1 2014

Firstpage

1492

Lastpage

1494

Abstract

The effect of 3-MeV proton irradiation on InGaN/GaN multiple quantum wells (MQWs) solar cells was investigated. The irradiation degradation of the photoluminescence characteristics of the InGaN film was also measured, indicating its potential to be used in space solar cells. With the proton fluence increasing from 0 to 1 × 10¹⁴/cm², the conversion efficiency (η) of the InGaN/GaN MQWs cell declined from 0.61% to 0.14%.

Keywords

III-V semiconductors; gallium compounds; indium compounds; photoluminescence; proton effects; quantum well devices; semiconductor quantum wells; semiconductor thin films; solar cells; thin film devices; wide band gap semiconductors; InGaN-GaN; MQW solar cells; conversion efficiency; electron volt energy 3 MeV; irradiation degradation; multiple quantum well solar cells; photoluminescence characteristics; proton fluence; proton irradiation effect; space solar cells; thin film; Films; Gallium arsenide; Gallium nitride; Photovoltaic cells; Protons; Quantum well devices; Radiation effects; InGaN; Solar cells; irradiation; proton;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2014.2327072

Filename

6823107