Title :
R-3 Ferroelectric Memory
Author :
Otsuki, T. ; Sakai, Yoshiki ; Onishi, Shotaro ; Mazure, C. ; Jones, Roy
Author_Institution :
Matsushita Electronics
Abstract :
Summary form only given. Ferroelectric memories utilize an electriically polarizable material such as Pb(Zr,Ti)03 or SrBi;!Ta209t o store information in a non-volatile fashion. Recent improvements in the understanding of these materials and associated electrodes allow the possibility of high density memories with multiple (> 1E10) read/write cycles and low voltage (few volts) switching. This discussion section will address two major issues associated with these materials.
Keywords :
Ferroelectric materials; Polarization;
Conference_Titel :
VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on
Print_ISBN :
4-930813-75-1
DOI :
10.1109/VLSIT.1997.623721
