High Voltage 3D-Capacitor

Author

Berberich, S.E. ; Bauer, A.J. ; Ryssel, H.

Author_Institution

Fraunhofer Inst. of Integrated Syst. & Device Technol., Erlangen

fYear

2007

fDate

2-5 Sept. 2007

Firstpage

1

Lastpage

9

Abstract

In this work, we introduce a high voltage 3D-capacitor as a novel passive power device for a 400 V application. This device is realized in silicon technology which allows process reproducibility, high accuracy in capacitance values, and high quality of the dielectric layers (i.e., endurance at high electric field strengths). It can be manufactured discrete or as part of a monolithic integrated circuit. The outstanding properties of the device are a high ratio of capacitance value to consumed silicon area (capacitance enlargement of more than a factor of 16 in comparison to plane capacitors) and very stable capacitance values over a broad temperature range (i.e., average of 24 ppm/degC from 20-175degC).

Keywords

capacitors; elemental semiconductors; passive networks; power semiconductor devices; silicon; Si; dielectric layers; high ratio capacitance; high voltage 3D capacitor; monolithic integrated circuit; passive power device; voltage 400 V; Capacitance; Capacitors; Dielectric devices; Integrated circuit manufacture; Integrated circuit technology; Monolithic integrated circuits; Reproducibility of results; Silicon; Temperature distribution; Voltage; Power semiconductor device; monolithic power integration; passive component integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2007 European Conference on

Conference_Location

Aalborg

Print_ISBN

978-92-75815-10-8

Electronic_ISBN

978-92-75815-10-8

Type

conf

DOI

10.1109/EPE.2007.4417708

Filename

4417708