A systematic methodology to design analog predistortion linearizer for dual inflection power amplifiers

Author

Rezaei, Saeed ; Hashmi, Mohammad S. ; Dehlaghi, Behzad ; Ghannouchi, Fadhel M.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Calgary, Calgary, AB, Canada

fYear

2011

fDate

5-10 June 2011

Firstpage

1

Lastpage

4

Abstract

This paper presents a systematic methodology to design a diode-based RF predistortion linearizer that can be used to linearize power amplifiers with dual inflection points in their distortion characteristics. The proposed structure contains anti parallel configuration of Schottky diodes, complemented with a PIN diode in parallel, connected to through and coupled ports of a 90° hybrid coupler using λ/4 transmission lines. The use of a PIN diode in the linearizer provides it with an extra level of freedom in achieving the desired level of amplitude and inflection depth in the AM/AM characteristic. A systematic design procedure using this configuration is proposed and applied to linearize a commercial power amplifier. Two tone test experimental results show that the IM3 cancellation of 10 dB in 1 MHz separation between tones at 2.14 GHz can be achieved.

Keywords

Schottky diodes; UHF diodes; UHF power amplifiers; network synthesis; p-i-n diodes; λ/4 transmission lines; IM3 cancellation; PIN diode; Schottky diodes; analog predistortion linearizer design; diode-based RF predistortion linearizer design; dual inflection power amplifiers; frequency 2.14 GHz; linearize power amplifiers; Admittance; Nonlinear distortion; PIN photodiodes; Power generation; Predistortion; Schottky diodes; APLAC model; Analog predistorter; Dual inflection points; PIN diode; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International

Conference_Location

Baltimore, MD

ISSN

0149-645X

Print_ISBN

978-1-61284-754-2

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2011.5972885

Filename

5972885