Title :
Ka-Band Wide-Bandwidth Voltage-Controlled Oscillators in InGaP-GaAs HBT Technology
Author :
Chiong, Chau-Ching ; Chang, Hong-Yeh ; Chen, Ming-Tang
Author_Institution :
Inst. of Astron. & Astrophys., Acad. Sinica, Taipei
Abstract :
Monolithic wide-bandwidth low-phase-noise voltage-controlled oscillators (VCOs) using 2-mum InGaP-GaAs heterojunction bipolar transistor (HBT) technology are presented in the paper. The tuning range of the VCOs are 28.0 to 34.0 GHz and 33.8 to 39.1 GHz, with a phase noise of -100.7 and -103.8 dBc/Hz at 1-MHz offset from the carrier. The overall dc power consumption of the differential-output VCOs is 85 mW with a supply voltage of -2.5 V. The VCOs feature wide tuning range and low phase noise at the same time, with a figure of merit (FOM) of -176 and -171 dB. These are the first Ka-band VCOs with wide tuning bandwidth using commercial GaAs HBT process.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; voltage-controlled oscillators; InGaP-GaAs; Ka-band wide-bandwidth voltage-controlled oscillators; dc power consumption; frequency 28 GHz to 34 GHz; frequency 33.8 GHz to 39.1 GHz; heterojunction bipolar transistor; low phase noise; tuning range; wide tuning bandwidth; CMOS technology; Circuit topology; Energy consumption; Heterojunction bipolar transistors; Inductors; MOSFETs; Noise figure; Radio frequency; Telecommunication network topology; Voltage-controlled oscillators;
Conference_Titel :
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-007-1
DOI :
10.1109/EMICC.2008.4772303
