Title :
SMIS - a prospective solution for power MOSFET transistor
Author :
Lisik, Zbigniew ; Podgorski, Jacek ; Szmidt, Jan
Author_Institution :
Tech. Univ. of Lodz, Lodz
Abstract :
The new solution of unipolar device, called SMIS, that can offer some advantages in the field of power semiconductor devices is presented. Correctness of the SMIS concept with reference to its application to power unipolar transistors has been checked by numerical simulations and manufacturing of test structures. The results of these investigations are presented in this paper.
Keywords :
power MOSFET; SMIS; numerical simulations; power MOSFET transistor; power semiconductor devices; test structures; unipolar device; Electrodes; MOSFET circuits; Numerical simulation; P-n junctions; Power MOSFET; Power semiconductor devices; Semiconductor devices; Uniform resource locators; Virtual manufacturing; Voltage; MOSFET; Schottky barrier; modelling; semiconductor device;
Conference_Titel :
Power Electronics and Applications, 2007 European Conference on
Conference_Location :
Aalborg
Print_ISBN :
978-92-75815-10-8
Electronic_ISBN :
978-92-75815-10-8
DOI :
10.1109/EPE.2007.4417730
