Title :
Ultra low power SiGe:C HBT for 0.18 /spl mu/m RF-BiCMOS
Author :
Xu, M.W. ; Decoutere, S. ; Sibaja-Hernandez, A. ; Van Wichelen, K. ; Witters, L. ; Loo, R. ; Kunnen, E. ; Knorr, C. ; Sadovnikov, A. ; Bulucea, Constantin
Author_Institution :
ESAT, Katholieke Univ., Leuven, Belgium
Abstract :
A SiGe:C HBT in 0.18 /spl mu/m BiCMOS is developed for ultra low power applications based on a unique optimization solution, including a dedicated PIN e/b design combined with a two-step Ge profile and a two-step SIC. State-of-the-art performance is achieved with respect to benchmarked low power devices.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; carbon; heterojunction bipolar transistors; low-power electronics; radiofrequency integrated circuits; semiconductor materials; 0.18 micron; PIN e/b design; RF-BiCMOS; SiGe:C; optimization; two-step Ge profile; two-step SIC; ultra low power HBT; Application specific processors; Boron; Capacitance; Current density; Current measurement; Delay effects; Density measurement; Doping profiles; Heterojunction bipolar transistors; Power measurement;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269181
