DocumentCode
2587409
Title
Design and packaging approach for MMIC insertion in a broadband 4*4 microwave switch matrix
Author
Gupta, R.K. ; Gerson, H.I. ; Ross, P.B. ; Assal, F.T.
Author_Institution
COMSAT Lab., Clarksburg, MD, USA
fYear
1988
fDate
6-9 Nov. 1988
Firstpage
261
Lastpage
264
Abstract
The design and packaging approach, as well as performance results, for a lightweight broadband (3.5- to 6.5-GHz) 4*4 microwave switch matrix (MSM) for C-band uplink and/or downlink onboard communications satellite applications are presented. A GaAs monolithic microwave integrated-circuit (MMIC) dual-gate field-effect transistor (FET) switch element with chip dimensions of 1.5 mm*2.5 mm forms a key building block of this miniaturized crossbar MSM. Over the 3.5- to 6.5-GHz frequency range, on-to-off isolation for all 16 paths is measured to be greater than 50 dB. The MSM insertion loss and path-to-path insertion loss variations, are less than 6.25 dB and 1 dB, respectively.<>
Keywords
MMIC; field effect integrated circuits; packaging; switching circuits; 3.5 to 6.5 GHz; C-band uplink; GaAs; MMIC insertion; MSM insertion loss; downlink onboard communications; dual-gate field-effect transistor; microwave switch matrix; miniaturized crossbar MSM; packaging; satellite; Artificial satellites; Communication switching; Downlink; Field effect MMICs; Frequency; Gallium arsenide; Insertion loss; Microwave FETs; Packaging; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location
Nashville, Tennessee, USA
Type
conf
DOI
10.1109/GAAS.1988.11071
Filename
11071
Link To Document