GaAs MMIC evaluation of via fracturing

Author

Pavio, J.S. ; Rhine, D.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1988

fDate

6-9 Nov. 1988

Firstpage

305

Lastpage

307

Abstract

An evaluation of the frequency of via fracturing in GaAs MMIC (monolithic microwave integrated circuit) devices is presented. After the development of a test pattern, devices were reflow-soldered to carrier plates utilizing gold-tin solder (80/20). Via fractures were tabulated and analyzed resulting, in a number of comparisons: frequency of fracturing as a function of via density, center vs. edge positioning on the device, linear vs. cluster arrangement of the vias, via diameter, and device thickness. Finally, guidelines were developed for reduction of the frequency of fracturing. It is concluded that to minimize the rate of via fracturing in GaAs devices mounted with AuSn solder, vias should be of the smallest diameter possible with current etch technology; slice thickness should not exceed 4 mils; and vias should be spaced no closer than 10 mils, edge-to-edge.<>

Keywords

III-V semiconductors; MMIC; gallium arsenide; integrated circuit technology; soldering; 10 mil; 4 mil; AuSn solder; GaAs; III-V semiconductors; MMIC evaluation; cluster arrangement; device thickness; linear arrangement; monolithic microwave integrated circuit; reflow soldering; slice thickness; test pattern; via density; via diameter; via fracturing; via spacing; Circuit testing; Etching; Frequency; Gallium arsenide; Guidelines; MMICs; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE

Conference_Location

Nashville, Tennessee, USA

Type

conf

DOI

10.1109/GAAS.1988.11082

Filename

11082