DocumentCode
2587751
Title
Reliability models of data retention and read-disturb in 2-bit nitride storage flash memory cells
Author
Wang, T. ; Tsai, W.J. ; Gu, S.H. ; Chan, C.T. ; Yeh, C.C. ; Zous, N.K. ; Lu, T.C. ; Pan, S. ; Lu, C.Y.
Author_Institution
Macronix Int. Co. Ltd., Hsin-Chu, Taiwan
fYear
2003
fDate
8-10 Dec. 2003
Abstract
The reliability issues of two-bit storage nitride flash memory cells, including low-V/sub t/ state threshold voltage instability, read-disturb, and high-V/sub t/ state charge loss are addressed. The responsible mechanisms and reliability models are discussed. Our study shows that the cell reliability is strongly dependent on operation methods and process conditions.
Keywords
flash memories; integrated circuit measurement; integrated circuit modelling; integrated circuit reliability; 2 bit; cell reliability; data retention reliability models; memory read-disturb; nitride storage flash memory cells; state charge loss; threshold voltage instability; Area measurement; Charge measurement; Current measurement; Electronics industry; Flash memory cells; Industrial electronics; Stress; Table lookup; Temperature; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7872-5
Type
conf
DOI
10.1109/IEDM.2003.1269202
Filename
1269202
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