DocumentCode
2587844
Title
RF performance vulnerability to hot carrier stress and consequent breakdown in low power 90 nm RFCMOS
Author
Pantisano, L. ; Schreurs, D. ; Kaczer, B. ; Jeamsaksiri, W. ; Venegas, R. ; Degraeve, R. ; Cheung, K.P. ; Groeseneken, G.
Author_Institution
IMEC, Leuven, Belgium
fYear
2003
fDate
8-10 Dec. 2003
Abstract
An in-depth analysis of the impact of hot-carrier stress (HCS) and oxide breakdown on 90 nm RFCMOS at low power bias is presented. Analog devices are found to be highly vulnerable to HCS under this condition. The post-breakdown MOSFET RF characteristics are completely explained by considering the location and the resistor-like behavior of the breakdown path.
Keywords
CMOS integrated circuits; MOSFET; hot carriers; low-power electronics; radiofrequency integrated circuits; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; 90 nm; HCS; RF performance vulnerability; breakdown path resistor-like behavior; hot carrier stress; low power RFCMOS; low power bias; oxide breakdown; post-breakdown MOSFET RF characteristics; CMOS technology; Degradation; Electric breakdown; Energy consumption; Hot carriers; Logic devices; MOSFET circuits; Radio frequency; Stress; Virtual colonoscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7872-5
Type
conf
DOI
10.1109/IEDM.2003.1269208
Filename
1269208
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