A 1T/1C Ferrodectric RAM Using A Double-level Metal Process For Highly Scalable Nonvolatile Memory
Author :
Dong-Jin Jung ; Nam-Soo Kang ; Sung-Yung Lee ; Bon-Jae Koo ; Jin-Woo Lee ; Joo-Han Park ; Yoon-Soo Chun ; Mi-Hyang Lee ; Byung-Gil Jeon ; Sang-In Lee ; Tae-Eam Shim ; Chang-Gyu Hwang
Author_Institution :
Technology Development, Semiconductor R & D Center, Samsung Elecb-onics, Co. San#24, Nongseo-Lee, Kiheung-Eup, Yongin-Ci~, Kyungki-Do, Korea, 449-900
fYear :
1997
fDate :
10-12 June 1997
Firstpage :
139
Lastpage :
140
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on
