A single chip 2.20 GHz T/R module

Author

Schindler, M.J. ; Chu, S.L. ; Kazior, T.E. ; Bertrand, A.M. ; Simon, K.M.

Author_Institution

Raytheon Co., Lexington, MA, USA

fYear

1990

fDate

7-8 May 1990

Firstpage

99

Lastpage

102

Abstract

A single-chip 2-20-GHz transmit/receive (T/R) module has been fabricated. This monolithic microwave IC (MMIC) includes a four-stage power amplifier chain, a four-stage low-noise amplifier, chain, and two T/R switches. A selective ion implantation process was used. One implant profile was optimized for low-noise operation and a second was optimized for power performance. All the circuits were designed to be relatively insensitive to process variations, thereby ensuring adequate yield despite the complexity of the chip. Distributed amplifiers are used throughout, and the T/R switches use a standard series-shunt FET configuration. All circuits have been miniaturized to keep the total chip size small. The entire T/R circuit measures only 0.143 in*0.193 in (3.6 mm*4.9 mm).<>

Keywords

MMIC; field effect integrated circuits; radar equipment; radio equipment; 2 to 20 GHz; MMIC; SHF; T/R module; T/R switches; four stage LNA chain; four-stage power amplifier chain; low-noise amplifier; low-noise operation; monolithic microwave IC; selective ion implantation process; single chip; standard series-shunt FET configuration; Distributed amplifiers; FETs; Implants; Ion implantation; Low-noise amplifiers; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1990. Digest of Papers., IEEE 1990

Conference_Location

Dallas, TX, USA

Type

conf

DOI

10.1109/MCS.1990.110948

Filename

110948