A 3.3kV IGBT module and application in modular multilevel converter for HVDC

The recent developments in power semiconductors and control methods have made the voltage source converter based high voltage direct current (VSC-HVDC) feasible [1]. Due to the application of voltage source converter (VSC) technology and pulse width modulation (PWM) the VSC-HVDC has a number of potential advantages as compared with CSC-HVDC(i.e., also referred to as classic HVDC), such as short circuit current reduction, independent control of active power and reactive power, etc. With those advantages VSC-HVDC will likely be widely used in future transmission and distribution systems. Modular multilevel PWM converter applies modular approach and phase-shifted concepts achieving a number of advantages and therefore is popularly used in HVDC power transmission. This paper describes the hardware design principle of submodule in modular multilevel converter(MMC). HVDC represents a challenging application for high power electronics device in terms of power loss, SOA robustness, and reliability,etc. Reliability is more commonly known as “power cycle” and “thermal cycle”. In order to meet these requirements, a new generation of 3.3kV high voltage IGBT module (named R-Series IGBT) is presented. This IGBT module, using `Fine Planar MOS gate Light Punch Through technology IGBT (FPLPT-HVIGBT)´ and `Soft reverse Recovery HV-Diode (SRHVDi)´ structures, exhibits an exceptionally low losses and high robustness. The chip technologies will be briefly described and detailed test results highlighting the smooth switching characteristics, extremely safe operating areas and high tolerance to stray inductance will be presented. The tests are carried out on an actual submodule of MMC based on the 3.3kV IGBT module and testing results are shown in this paper.