Title :
Performance comparison of sub 1 nm sputtered TiN/HfO/sub 2/ nMOS and pMOSFETs
Author :
Tsai, Wen-Ru ; Ragnarsson, L.-A. ; Pantisano, L. ; Chen, P.J. ; Onsia, B. ; Schram, T. ; Cartier, E. ; Kerber, A. ; Young, E. ; Caymax, M. ; De Gendt, S. ; Heyns, M.
Author_Institution :
c/o IMEC, Intel Corp, Leuven, Belgium
Abstract :
HfO/sub 2/ nMOSFETs and pMOSFETs were fabricated using scaled chemical oxides as a starting interface, together with sputtered (PVD) TiN gate electrodes. Aggressively scaled stacks of 8.2 /spl Aring/ EOT on nMOS and 7.5 /spl Aring/ EOT on pMOS were achieved with leakage current of <5 A/cm/sup 2/ at V/sub FB/ +1 volts. Low fixed charge density in the HfO/sub 2/ layer was observed from VFB extraction, using high frequency-CV measurements, when considering a TiN workfunction of 4.78 eV. Conventional C-V hysteresis and transient V/sub T/ instability measurements on sub 1 nm TiN/HfO/sub 2/ devices indicated reduced instability as a result of EOT scaling. The electron mobility is degraded with EOT scaling whereas hole mobility remains constant down to an EOT of 8 /spl Aring/.
Keywords :
MOSFET; electron mobility; hafnium compounds; hole mobility; leakage currents; semiconductor device measurement; sputter deposition; tin compounds; transient response; work function; 4.78 eV; 7.5 /spl Aring/; 8 /spl Aring/; 8.2 /spl Aring/; C-V hysteresis; EOT scaling; PVD; TiN-HfO/sub 2/; electron mobility; fixed charge density; high frequency-CV measurements; hole mobility; leakage current; nMOSFET; pMOSFET; scaled chemical oxides; sputtered MOSFET; sputtered TiN gate electrodes; transient instability; work function; Atherosclerosis; Channel bank filters; Chemicals; Electrodes; Frequency; Hafnium oxide; Leakage current; MOS devices; MOSFETs; Tin;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269287
