Title :
Re-investigation of MOS inversion layer mobility from non-universality and possible new scattering mechanism aspects
Author :
Irie, H. ; Kita, K. ; Kyuno, K. ; Toriumi, A.
Author_Institution :
Dept. of Mater. Sci., Tokyo Univ., Japan
Abstract :
This paper reports a systematic re-investigation of the universality of MOS inversion layer mobility through careful measurement. We demonstrate for the first time that the definition of the effective normal field for characterizing the universality is variable with the normal electric field, temperature, and substrate doping concentration. In addition, we propose that another new scattering mechanism should be involved to explain the mobility behavior around 100 K.
Keywords :
MOSFET; carrier mobility; doping profiles; inversion layers; phonons; scattering; semiconductor device measurement; 100 K; MOS inversion layer mobility; MOSFET; angle limited phonon scattering mechanism; effective normal field; low temperature mobility behavior; mobility universality; substrate doping concentration; Doping; Impurities; MOSFETs; Materials science and technology; Parasitic capacitance; Performance evaluation; Q measurement; Scattering parameters; Temperature; Variable structure systems;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269321
