DocumentCode :
2590028
Title :
Thermal Instabilities and Hot Spots in Junction Transistors
Author :
Scarlett, R.M. ; Shockley, W. ; Haitz, R.H.
Author_Institution :
Shockley Transistor, Unit of Clevite Transistor, Palo Alto, California
fYear :
1962
fDate :
Sept. 1962
Firstpage :
194
Lastpage :
203
Keywords :
Alloying; Current density; Current distribution; Electric breakdown; Heat sinks; Power transistors; Silicon; Temperature dependence; Temperature distribution; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics of Failure in Electronics, 1962. First Annual Symposium on the
Conference_Location :
Chicago, IL, USA
ISSN :
0097-2088
Type :
conf
DOI :
10.1109/IRPS.1962.359995
Filename :
4202001
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2590028
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