A novel graded antireflective coating with built-in hardmask properties enabling 65nm and below CMOS device patterning

Author

Babich, K. ; Fukiage, N. ; Mahorowala, A. ; Halle, S. ; Bunner, T. ; Pfeiffer, D. ; Mochiki, H. ; Ashigaki, S. ; Xia, A. ; Angelopoulos, M.

Author_Institution

IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2003

fDate

8-10 Dec. 2003

Abstract

Novel silicon carbide (Si:C:H) and silicon oxycarbide (Si:C:O:H) based materials, prepared by plasma-enhanced chemical vapor deposition (PECVD), have been developed with dual anti-reflective (ARC) and hardmask properties thus enabling the use of thin resists for high resolution device pattering. High quality 25 nm polysilicon gates and ultra-high aspect ratio (>65:1) 8 /spl mu/m deep trench (DT) features in Si have been fabricated with this ARC/hardmask technology.

Keywords

CMOS integrated circuits; antireflection coatings; carbon; chemical vapour deposition; elemental semiconductors; hydrogen; isolation technology; masks; oxygen; resists; silicon; 25 nm; 65 nm; 8 micron; ARC; CMOS device patterning; PECVD; SiC:H; SiOC:H; graded antireflective coating; hardmask technology; high resolution device pattering; plasma-enhanced chemical vapor deposition; polysilicon gates; silicon carbide; silicon oxycarbide; thin resists; ultra-high aspect ratio deep trench features; Coatings; Electrons; Etching; Lithography; Optical films; Optical materials; Plasma applications; Plasma materials processing; Plasma properties; Resists;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269369

Filename

1269369