• DocumentCode
    2590792
  • Title

    Physical insights on design and modeling of nanoscale FinFETs

  • Author

    Fossum, J.G. ; Chowdhury, M.M. ; Trivedi, V.P. ; King, T.-J. ; Choi, Y.-K. ; An, J. ; Yu, B.

  • Author_Institution
    Florida Univ., Gainesville, FL, USA
  • fYear
    2003
  • fDate
    8-10 Dec. 2003
  • Abstract
    An array of measured device data, a numerical device simulator, and a process/physics-based compact model are used to gain new and important physical insights on nanoscale FinFETs with undoped thin-fin bodies. The insights, which include unavoidable/needed gate underlap, bias-dependent effective channel length, and non-ohmic fin-extension voltage drops, reveal the significance of gate positioning on, and source/drain doping profile in, the thin fin, and imply novel compact modeling that will be needed for optimal design of nonclassical CMOS circuits.
  • Keywords
    MOSFET; doping profiles; nanoelectronics; semiconductor device measurement; semiconductor device models; bias-dependent effective channel length; gate positioning; gate underlap; nanoscale FinFET; nonclassical CMOS circuits; nonohmic fin-extension voltage drop; source/drain doping profile; undoped thin-fin body; Circuits; Doping profiles; FinFETs; Gain measurement; Nanoscale devices; Numerical simulation; Semiconductor device modeling; Semiconductor process modeling; Silicon on insulator technology; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
  • Conference_Location
    Washington, DC, USA
  • Print_ISBN
    0-7803-7872-5
  • Type

    conf

  • DOI
    10.1109/IEDM.2003.1269371
  • Filename
    1269371