Title :
Device physics at the scaling limit: what matters? [MOSFETs]
Author_Institution :
Purdue Univ., West Lafayette, IN, USA
Abstract :
This paper reviews our efforts to use theory and simulation to understand the device physics of nanoscale MOSFETs. The essential physics of MOSFETs at the scaling limit are discussed, and unresolved theoretical issues and technological ones that limit device performance and ultimate scaling are identified.
Keywords :
MOSFET; ballistic transport; nanoelectronics; quantum theory; scattering; semiconductor device models; ballistic MOSFET; device performance limitations; nanoscale MOSFET; quantum mechanical effects; scaling limit device physics; scattering; CMOS technology; Computational modeling; MOSFETs; Nanoscale devices; Physics; Predictive models; Quantum capacitance; Quantum computing; Quantum mechanics; Scattering;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269398
