DocumentCode
2591690
Title
Millimeter-wave field-effect transistors produced using high-purity semiconducting single-walled carbon nanotubes
Author
Happy, H. ; Nougaret, L. ; Derycke, V. ; Dambrine, Gilles
Author_Institution
Institute of Electronics, Microelectronics and Nanotechnology, Villeneuve d´ASCQ cedex, France
fYear
2011
fDate
5-10 June 2011
Firstpage
1
Lastpage
1
Abstract
Summary form only given, as follows. We propose an overview of our works on carbon nanotube field effect transistors (CNTFETs) which are well suited for high frequency applications. Using single-walled carbon nanotube (SWNT) samples containing 99% pure semiconducting SWNTs, we have achieved operating frequency above 80GHz. This record frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of networks of sorted SWNTs for high frequency electronics.
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location
Baltimore, MD
ISSN
0149-645X
Print_ISBN
978-1-61284-754-2
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2011.5973171
Filename
5973171
Link To Document