• DocumentCode
    2591690
  • Title

    Millimeter-wave field-effect transistors produced using high-purity semiconducting single-walled carbon nanotubes

  • Author

    Happy, H. ; Nougaret, L. ; Derycke, V. ; Dambrine, Gilles

  • Author_Institution
    Institute of Electronics, Microelectronics and Nanotechnology, Villeneuve d´ASCQ cedex, France
  • fYear
    2011
  • fDate
    5-10 June 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given, as follows. We propose an overview of our works on carbon nanotube field effect transistors (CNTFETs) which are well suited for high frequency applications. Using single-walled carbon nanotube (SWNT) samples containing 99% pure semiconducting SWNTs, we have achieved operating frequency above 80GHz. This record frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of networks of sorted SWNTs for high frequency electronics.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-61284-754-2
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2011.5973171
  • Filename
    5973171