Title :
Effect of bulk trap density on HfO/sub 2/ reliability and yield
Author :
Degraeve, R. ; Kerber, A. ; Roussell, P. ; Cartier, E. ; Kauerauf, T. ; Pantisano, L. ; Groeseneken, G.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
The trap density in an ALD SiO/sub 2//HfO/sub 2/ stack is measured with charge pumping. A critical trap density at breakdown is found and a percolation model is proposed to explain HfO/sub 2/ breakdown. On this particular stack, a direct link between the bulk trap density and the HfO/sub 2/ yield and reliability is demonstrated. A low initial HfO/sub 2/ bulk trap density is essential in order to guarantee the reliability of these stacks.
Keywords :
atomic layer deposition; dielectric thin films; electron traps; hafnium compounds; percolation; semiconductor device breakdown; semiconductor device reliability; silicon compounds; ALD; SiO/sub 2/-HfO/sub 2/; atomic layer deposition; breakdown critical trap density; bulk trap density; charge pumping; electron traps; percolation model; stack reliability; stack yield; Charge measurement; Charge pumps; Current measurement; Density measurement; Extrapolation; Frequency measurement; Hafnium oxide; Stress measurement; Time measurement; Voltage;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269432
