Linearity enhancement of GaN HEMTs under complex modulated excitations by optimizing the baseband impedance environment

Summary form only given, as follows. This paper demonstrates how the linearity performance of a 10W GaN HEMT can be dramatically improved by actively engineering the baseband impedance environment around the device. An important refinement to existing active load-pull measurement capability is proposed that allows the precise and independent control of all significant baseband and RF components that result from the amplification of a complex 9-carrier multisine modulation.