Title :
An acoustic waveguide based on doubly-bonded silicon/PPT/silicon structures
Author :
Courjon, E. ; Bassignot, F. ; Ulliac, G. ; Laroche, T. ; Garcia, J. ; Gachon, D. ; Queste, S. ; Romand, J.-P. ; Ballandras, S. ; Petit, R.
Author_Institution :
Inst. FEMTO-ST, UTBM, Besancon, France
Abstract :
In this paper, we present new results on the development of piezoelectric transducers based on periodically poled ferroelectric domains in a lithium niobate plate bonded between two silicon wafers. The fabrication of the periodically poled transducers operating in the range 50-500 MHz has been achieved on a 3 inches 500 mum thick wafer. These devices then have been bonded on silicon wafers to fabricate a waveguide. Guided elliptic as well as partially guided longitudinal modes are excited. The experimental responses of the tested devices are compared to predicted harmonic admittances, showing a good agreement between both results and allowing for a reliable analysis of the nature of the excited modes. We also show interesting studies of material combinations used to guide ultrasonic waves. Dispersion properties have also been studied for a structure Si/PPT/Si.
Keywords :
acoustic waveguides; ferroelectric devices; lithium compounds; piezoelectric transducers; ultrasonic waves; LiNbO3; PPT structure; acoustic waveguide; dispersion properties; doubly-bonded silicon structure; excited modes; frequency 50 MHz to 500 MHz; harmonic admittances; lithium niobate plate; partially guided longitudinal modes; periodically poled ferroelectric domains; piezoelectric transducers; reliable analysis; silicon wafers; ultrasonic waves; Acoustic transducers; Acoustic waveguides; Acoustic waves; Fabrication; Ferroelectric materials; Lithium niobate; Piezoelectric transducers; Silicon; Testing; Wafer bonding;
Conference_Titel :
Frequency Control Symposium, 2009 Joint with the 22nd European Frequency and Time forum. IEEE International
Conference_Location :
Besancon
Print_ISBN :
978-1-4244-3511-1
Electronic_ISBN :
1075-6787
DOI :
10.1109/FREQ.2009.5168317