Title :
A novel distributed amplifier with high gain, low noise and high output power in 0.18-µm CMOS technology
Author :
Chen, Peng ; Kao, Jung-Chun ; Huang, Pei-Yu ; Wang, Huifang
Author_Institution :
National Taiwan University, Taipei, Taiwan
Abstract :
Summary form only given, as follows. A new distributed amplifier (DA) topology is proposed, and it makes wideband amplifier design give considerations to the gain, noise figure and output power simultaneously. From measurements, the DA has a small signal gain of 20.5 dB and 3-dB bandwidth of 35 GHz. The maximum OP1dB is 8.6 dBm and the noise figure is between 6.8 and 8 dB at frequency lower than 18 GHz. The circuit has the highest ratio of gain-bandwidth product to chip area and the highest figure of merit (FOM) in 0.18-µm CMOS.
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5973318
