Two-dimensional analytic modeling of very thin SOI MOSFETs

Summary form only given. A two-dimensional analytic model is described that is based on the solution of the Poisson´s equation in the thin SOI as well as in the gate and buried oxides using an infinite series method. Using this model, the scaling dependence on the thickness of the SOI is studied. It is found that very thin SOI is suitable for deep submicron device application. In applications where bulk-substrate bias is not feasible, it may be possible to provide the equivalent bulk-substrate bias through metal-ion implanted into the buried oxides. The linear region threshold voltage was also investigated using this model and it was found that short-channel behavior in general improves with thin SOI