DocumentCode
2594574
Title
Cell Library Characterization at Low Voltage Using Non-linear Operating Point Analysis of Local Variations
Author
Rithe, Rahul ; Chou, Sharon ; Gu, Jie ; Wang, Alice ; Datla, Satyendra ; Gammie, Gordon ; Buss, Dennis ; Chandrakasan, Anantha
Author_Institution
Massachusetts Inst. of Technol., Cambridge, MA, USA
fYear
2011
fDate
2-7 Jan. 2011
Firstpage
112
Lastpage
117
Abstract
When CMOS is operated at a supply voltage of 0.5V and below, Random Dopant Fluctuations (RDFs) result in a stochastic component of logic delay that can be comparable to the nominal delay. Moreover, the Probability Density Function (PDF) of this stochastic delay can be highly non-Gaussian. The Non-Linear, Operating Point Analysis of Local Variations (NLOPALV) technique has been shown to be accurate and computationally efficient in simulating any point on the delay PDF of a logic Timing Path (TP). This paper applies the NLOPALV approach to characterizing the stochastic delay of logic cells. NLOPALV theory is presented, and NLOPALV is used to characterize a cell library designed in 28 nm CMOS. NLOPALV is accurate to within 5% compared to SPICE-based Monte Carlo analysis.
Keywords
CMOS logic circuits; delay circuits; low-power electronics; probability; CMOS integrated circuit; local variations; logic cell library; logic delay; logic timing path; low voltage; nominal delay; nonlinear operating point analysis; probability density function; random dopant fluctuations; size 28 nm; stochastic delay; Accuracy; Delay; Nonlinear optics; Random variables; SPICE; Stochastic processes; Transistors; Local Variations; Low Voltage; Timing Analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design (VLSI Design), 2011 24th International Conference on
Conference_Location
Chennai
ISSN
1063-9667
Print_ISBN
978-1-61284-327-8
Electronic_ISBN
1063-9667
Type
conf
DOI
10.1109/VLSID.2011.43
Filename
5718787
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