DocumentCode
2594740
Title
30 GHz Multi-Bit Monolithic Phase Shifters
Author
Bauhahn, P. ; Butter, C. ; Sokolov, V. ; Contolatis, A.
Volume
85
Issue
1
fYear
1985
fDate
31199
Firstpage
4
Lastpage
7
Abstract
The design and performance of GaAs monolithic 3-bit and 4/5 bit switched line phase shifters for Ka-band operation are discussed. Both conventional recessed and self-aligned gate (SAG) switching FET designs are presented. The insertionloss was as low as 2dB per bit for the recessed gate and 2.9 dB per bit with the SAG gate devices for the particular doping levels used.
Keywords
Antenna arrays; Doping; FETs; Fabrication; Fixtures; Insertion loss; Microstrip; Phase shifters; Radar antennas; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits
Type
conf
DOI
10.1109/MCS.1985.1113627
Filename
1113627
Link To Document