• DocumentCode
    2594835
  • Title

    A Ka-Band GaAs Power MMIC

  • Author

    Kobiki, M. ; Mitsui, Y. ; Sasaki, Y. ; Komaru, M. ; Seino, K. ; Takagi, T.

  • Volume
    85
  • Issue
    1
  • fYear
    1985
  • fDate
    31199
  • Firstpage
    31
  • Lastpage
    34
  • Abstract
    A Ka-band GaAs power MMIC with source island via-hole PHS structure and monolithic power divider /combiner circuits was developed and reliability study was performed. This source island via-hole technique successfully reduced both thermal resistance and source parasitic inductance of the MMIC. The 3200 µm MMIC gave power output at 1dB gain compression of 1.1 W, linear power gain of 4.0 dB and power added efficiency of 10.8 % at 28 GHz. No failure was observed in the temperature cycling, the DC running and the high temperature storage tests.
  • Keywords
    Circuits; Etching; Gallium arsenide; Gold; Impedance; Inductance; MMICs; Microwave FETs; Surface resistance; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter-Wave Monolithic Circuits
  • Type

    conf

  • DOI
    10.1109/MCS.1985.1113632
  • Filename
    1113632
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2594835