Title :
The innovative AlN-ISFET based pH sensor
Author :
Bunjongpru, W. ; Porntheeraphat, S. ; Trithaveesak, O. ; Somwang, N. ; Khomdet, P. ; Jeamsaksiri, W. ; Hruanun, C. ; Poyai, A. ; Nukeaw, J.
Author_Institution :
Thai Microelectron. Center (TMEC), Chachoengsao
Abstract :
This innovative pH-ISFET sensor used nanocrystalline-AlN thin film as ion-sensitive membrane which prepared by reactive gas-timing r.f. magnetron sputtering without heating substrate and post annealing. The technique of gas-timing r.f. magnetron sputtering purposed by us, the feeding gas is on-off controlled periodically in such a way that the deposited AlOxNy film has a quite stable composition of aluminum, nitrogen and oxygen (Al:O:N=52:18:30%) all over the entire film. The AlN-ISFET devices were structured. The pH-sensitivity characteristics show increasing sensitivity depended on film thickness. The highest sensitivity is 54.50 mV/pH achieved from 80 nm of AlN thin film which is comparable to our previous report Si3N4-ISFET devices.
Keywords :
aluminium compounds; chemical sensors; ion sensitive field effect transistors; oxygen compounds; pH measurement; silicon compounds; sputtering; AlON; ISFET based pH sensor; SiN; ion-sensitive membrane; nanocrystalline thin film; post annealing; reactive gas-timing; rf magnetron sputtering; Aluminum; Annealing; Biomembranes; Heating; Magnetic sensors; Nitrogen; Sputtering; Substrates; Thermal sensors; Thin film sensors;
Conference_Titel :
Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, 2008. ECTI-CON 2008. 5th International Conference on
Conference_Location :
Krabi
Print_ISBN :
978-1-4244-2101-5
Electronic_ISBN :
978-1-4244-2102-2
DOI :
10.1109/ECTICON.2008.4600559
